Recent developments

Several new types of non-volatile RAM, which will preserve data while powered down, are under development. The technologies used include carbon nanotubes and the magnetic tunnel effect. In summer 2003, a 128 KB magnetic RAM chip manufactured with 0.18 µm technology was introduced. The core technology of MRAM is based on the magnetic tunnel effect. In June 2004, Infineon Technologies unveiled a 16 MB^[2] prototype again based on 0.18 µm technology. Nantero built a functioning carbon nanotube memory prototype 10 GB^[2] array in 2004. Whether some of these technologies will be able to eventually take a significant market share from either DRAM, SRAM, or flash-memory technology, remains to be seen however.

In 2006, "Solid-state drives" (based on flash memory) with capacities exceeding 150 gigabytes and speeds far exceeding traditional disks have become available. This development has started to blur the definition between traditional random access memory and "disks", dramatically reducing the difference in performance.

Memory wall

The "memory wall" is the growing disparity of speed between CPU and memory outside the CPU chip. An important reason for this disparity is the limited communication bandwidth beyond chip boundaries. From 1986 to 2000, CPU speed improved at an annual rate of 55% while memory speed only improved at 10%. Given these trends, it was expected that memory latency would become an overwhelming bottleneck in computer performance. ^[3]

Currently, CPU speed improvements have slowed significantly partly due to major physical barriers and partly because current CPU designs have already hit the memory wall in some sense. Intel summarized these causes in their Platform 2015 documentation (PDF)^{[dead link]}:

“First of all, as chip geometries shrink and clock frequencies rise, the transistor leakage current increases, leading to excess power consumption and heat (more on power consumption below). Secondly, the advantages of higher clock speeds are in part negated by memory latency, since memory access times have not been able to keep pace with increasing clock frequencies. Third, for certain applications, traditional serial architectures are becoming less efficient as processors get faster (due to the so-called Von Neumann bottleneck), further undercutting any gains that frequency increases might otherwise buy. In addition, partly due to limitations in the means of producing inductance within solid state devices, resistance-capacitance (RC) delays in signal transmission are growing as feature sizes shrink, imposing an additional bottleneck that frequency increases don't address.”

The RC delays in signal transmission were also noted in Clock Rate versus IPC: The End of the Road for Conventional Microarchitectures which projects a maximum of 12.5% average annual CPU performance improvement between 2000 and 2014. The data on Intel Processors clearly shows a slowdown in performance improvements in recent processors. However, Intel's new processors, Core 2 Duo (codenamed Conroe) show a significant improvement over previous Pentium 4 processors; due to a more efficient architecture, performance increased while clock rate actually decreased.

Security concerns

Contrary to simple models (and perhaps common belief), the contents of modern SDRAM modules aren't lost immediately when the computer is shutdown; instead, the contents fade away - a process that takes only seconds at room temperatures, but which can be extended to minutes at low temperatures. As an example, it is therefore possible to get hold of an encryption key if it was stored in ordinary working memory (i.e. the SDRAM modules).^[4]